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MEASUREMENTS OF THE STOPPING POWER OF 40-KEV TO 300-KEV PROTONS IN SILICON

被引：9
作者：
KUHRT, E
LENKEIT, K
TAUBNER, F
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1981年 / 66卷 / 02期
关键词：
D O I：
10.1002/pssa.2210660260
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：K131 / K133
页数：3
相关论文
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[5]   MEASUREMENTS OF THE RATIO BETWEEN PLANAR AND RANDOM STOPPING POWER FOR 80 TO 300 KEV PROTONS IN SILICON [J].
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