PREDICTED MODIFICATIONS IN THE DIRECT AND INDIRECT GAPS OF SI

被引：4

作者：

BOUHAFS, B

AOURAG, H

机构：

[1] Computational Materials Science Laboratory, Physics Department, University of Sidi-Bel-Abbes

来源：

SOLID STATE COMMUNICATIONS | 1995年 / 96卷 / 04期

关键词：

SEMICONDUCTORS; ELECTRONIC BAND STRUCTURE; ELECTRONIC STAKES (LOCALIZED);

D O I：

10.1016/0038-1098(95)00268-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have studied the effects of expansion of the lattice on fundamental band gaps in Si, with the use of an adjusted pseudopotential method. The results show that Si structure becomes a direct band gap. A correlation is given with the properties of tetrahedrally filled semiconductors and those of porous silicon.

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页码：245 / 250

页数：6

相关论文

共 37 条

[1] THE CORRELATION BETWEEN CHARGE-DENSITIES AND INTERSTITIAL IMPURITIES IN ALP AND ALAS [J].

AOURAG, H ;

BELAIDI, A ;

KHELIFA, B ;

GAMOUDI, M ;

JARDIN, C .

PHYSICS LETTERS A, 1990, 149 (5-6) :305-310

[2] ELECTRON AND POSITRON DISTRIBUTIONS IN GRAY TIN [J].

AOURAG, H ;

SOUDINI, B ;

KHELIFA, B ;

BELAIDI, A .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1990, 161 (02) :685-695

[3] CORRELATION BETWEEN SUBSTITUTION AND INTERSTITIAL DOPING IN ZNXHG1-XTE [J].

AOURAG, H ;

HAMMADI, M ;

KHELIFA, B .

MATERIALS CHEMISTRY AND PHYSICS, 1993, 33 (3-4) :197-203

[4] VALENCE AND CONDUCTION BAND-EDGES - CHARGE-DENSITIES IN DIAMOND [J].

AOURAG, H ;

MERAD, G ;

KHELIFA, B ;

MAHMOUDI, A .

MATERIALS CHEMISTRY AND PHYSICS, 1991, 28 (04) :431-435

[5] ELECTROREFLECTANCE OF GAAS AND GAP TO 27 EV USING SYNCHROTRON RADIATION [J].

ASPNES, DE ;

OLSON, CG ;

LYNCH, DW .

PHYSICAL REVIEW B, 1975, 12 (06) :2527-2538

[6] RELATIVISTIC AND CORE-RELAXATION EFFECTS ON THE ENERGY-BANDS OF GALLIUM-ARSENIDE AND GERMANIUM [J].

BACHELET, GB ;

CHRISTENSEN, NE .

PHYSICAL REVIEW B, 1985, 31 (02) :879-887

[7]

BOUHAFS B, 1995, IN PRESS J INFRARED

[8] OPTICAL-PROPERTIES OF POROUS SILICON - A 1ST-PRINCIPLES STUDY [J].

BUDA, F ;

KOHANOFF, J ;

PARRINELLO, M .

PHYSICAL REVIEW LETTERS, 1992, 69 (08) :1272-1275

[9] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].

CANHAM, LT .

APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048

[10] ELECTRONIC-STRUCTURE OF LIZNN - INTERSTITIAL INSERTION RULE [J].

CARLSSON, AE ;

ZUNGER, A ;

WOOD, DM .

PHYSICAL REVIEW B, 1985, 32 (02) :1386-1389

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