CORRELATION BETWEEN SUBSTITUTION AND INTERSTITIAL DOPING IN ZNXHG1-XTE

被引：2

作者：

AOURAG, H ^{[1
]}

HAMMADI, M ^{[1
]}

KHELIFA, B ^{[1
]}

机构：

[1] UNIV ORAN,INST PHYS,OPT LAB,ORAN 31100,ALGERIA

来源：

MATERIALS CHEMISTRY AND PHYSICS | 1993年 / 33卷 / 3-4期

关键词：

D O I：

10.1016/0254-0584(93)90062-Q

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

On the basis of Gaussian nonlocal pseudopotential and virtual crystal approximation methods, the valence and conduction band charge densities at different high symmetry points are calculated. The bonding properties and the effect of interstitial impurities on the modification of the band structure of the system ZnxHg1-xTe are explained. The effect of the substitution is correlated to this interstitial.

引用

页码：197 / 203

页数：7

共 6 条

[1] THE CORRELATION BETWEEN CHARGE-DENSITIES AND INTERSTITIAL IMPURITIES IN ALP AND ALAS [J].

AOURAG, H ;

BELAIDI, A ;

KHELIFA, B ;

GAMOUDI, M ;

JARDIN, C .

PHYSICS LETTERS A, 1990, 149 (5-6) :305-310

[2] VALENCE AND CONDUCTION BAND-EDGES FOR SIC AND BN [J].

AOURAG, H ;

KHELIFA, B ;

BELAIDI, A .

MATERIALS CHEMISTRY AND PHYSICS, 1990, 25 (05) :531-535

[3] POSITRON-ANNIHILATION IN SI AND GE [J].

AOURAG, H ;

BELAIDI, A ;

KOBAYASI, T ;

WEST, RN ;

KHELIFA, B .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1989, 155 (01) :191-200

[4] ELECTRON AND POSITRON DISTRIBUTION FOR THE PLANE (110) IN SI AND GAAS [J].

AOURAG, H ;

BELAIDI, A ;

KOBAYASI, T ;

WEST, RN ;

KHELIFA, B .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1989, 156 (02) :497-505

[5]

AOURAG H, IN PRESS PHILOS MAG

[6]

AOURAG H, IN PRESS

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