THE EFFECT OF FLUORINE IMPLANTATION ON THE INTERFACE RADIATION HARDNESS OF SI-GATE METAL-OXIDE-SEMICONDUCTOR TRANSISTORS

被引：27

作者：

NISHIOKA, Y

OHYU, K

OHJI, Y

NATSUAKI, N

MUKAI, K

MA, TP

机构：

[1] YALE UNIV,CTR MICROELECTR MAT & STRUCT,NEW HAVEN,CT 06520

[2] YALE UNIV,DEPT CENT,NEW HAVEN,CT 06520

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 08期

关键词：

D O I：

10.1063/1.344012

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3909 / 3912

页数：4

共 10 条

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