MATERIALS WITH A BURIED C(60) LAYER PRODUCED BY DIRECT WAFER BONDING

被引：6

作者：

TONG, QY ^{[1
]}

EOM, CB ^{[1
]}

GOSELE, U ^{[1
]}

HEBARD, AF ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1994年 / 141卷 / 10期

关键词：

D O I：

10.1149/1.2059259

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Si wafers covered with a sublimed C60 layer have been directly bonded to bare or oxidized Si wafers at room temperature via Van der Waals attraction forces. The interface energies of the bonded pairs increase during storage in air at room temperature and approach saturated values after approximately 200 h. The typical saturated interface energy of C60/SiO2 (approximately 40 erg/cm2) is higher than that of C60/Si (20-30 erg/cm2). Other material combinations having a C60 buried layer may also be realized by wafer bonding for specific applications.

引用

页码：L137 / L138

页数：2

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