IMPROVED LPE TECHNIQUES FOR LOW THRESHOLD LASERS AT 1.55 MU-M IN THE QUATERNARY IN-GA-AS-P INP SYSTEM

被引：8

作者：

NELSON, AW

WESTBROOK, LD

WHITE, EAD

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1982年 / 58卷 / 01期

关键词：

D O I：

10.1016/0022-0248(82)90231-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：236 / 242

页数：7

共 13 条

[1]

ANTYPAS GA, 1980, Patent No. 2048227

[2] ROOM-TEMPERATURE CW OPERATION OF INP-INGAASP-INP DOUBLE HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.55 MU-M [J].

KAWAGUCHI, H ;

TAKAHEI, K ;

TOYOSHIMA, Y ;

NAGAI, H ;

IWANE, G .

ELECTRONICS LETTERS, 1979, 15 (21) :669-670

[3]

MESSHAM RL, 1979, THESIS U SHEFFIELD

[4] ULTIMATE LOW-LOSS SINGLE-MODE FIBER AT 1.55 MU-M [J].

MIYA, T ;

TERUNUMA, Y ;

HOSAKA, T ;

MIYASHITA, T .

ELECTRONICS LETTERS, 1979, 15 (04) :106-108

[5] TEMPERATURE-DEPENDENCE OF INGAASP DOUBLE-HETEROSTRUCTURE LASER CHARACTERISTICS [J].

NAHORY, RE ;

POLLOCK, MA ;

DEWINTER, JC .

ELECTRONICS LETTERS, 1979, 15 (21) :695-696

[6] THRESHOLD CURRENT VARIATIONS AND OPTICAL SCATTERING LOSSES IN (AL,GA)AS DOUBLE-HETEROSTRUCTURE LASERS [J].

NASH, FR ;

WAGNER, WR ;

BROWN, RL .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) :3992-4005

[7]

Nelson A., UNPUB

[8] LIQUID-PHASE EPITAXIAL IN1-XGAXASYP1-Y LATTICE MATCHED TO (100) INP OVER COMPLETE WAVELENGTH RANGE 0.92 GREATER-THAN-LAMBDA-EQUAL-TO-1.65 MU-M [J].

POLLACK, MA ;

NAHORY, RE ;

DEWINTER, JC ;

BALLMAN, AA .

APPLIED PHYSICS LETTERS, 1978, 33 (04) :314-316

[9] 3-LAYER 1.3 MU-M IN1-XGAXASYP1-Y LASERS WITH QUATERNARY CONFINING LAYERS [J].

PRINCE, FC ;

PATEL, NB ;

CHANG, SL ;

BULL, DJ .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (05) :597-602

[10] THE PROBLEM OF SUBSTRATE DISSOLUTION IN LPE OF III-V COMPOUNDS IN THE SIMPLE SOLUTION APPROXIMATION - APPLICATION TO THE INXGA1-XASYP1-Y-INP SYSTEM [J].

QUILLEC, M ;

BENCHIMOL, JL .

JOURNAL OF CRYSTAL GROWTH, 1981, 54 (01) :76-80

← 1 2 →