ELECTRON-PARAMAGNETIC RESONANCE OF NICKEL IN SILICON .1. IDENTIFICATION OF SPECTRUM

被引：18

作者：

VLASENKO, LS ^{[1
]}

SON, NT ^{[1
]}

VANOOSTEN, AB ^{[1
]}

AMMERLAAN, CAJ ^{[1
]}

LEBEDEV, AA ^{[1
]}

TAPTYGOV, ES ^{[1
]}

KHRAMTSOV, VA ^{[1
]}

机构：

[1] UNIV AMSTERDAM,NAT LAB,1018 XE AMSTERDAM,NETHERLANDS

来源：

SOLID STATE COMMUNICATIONS | 1990年 / 73卷 / 05期

关键词：

D O I：

10.1016/0038-1098(90)90445-H

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Results are reported on the paramagnetic resonance spectrum recently identified with the negatively charged state of substitutional nickel in n-type silicon. Studies were made on the presence of the spectrum in silicon with different concentrations of phosphorus doping and under various conditions of illimination. The centre has orthorhombic-I symmetry. Its resonance spectrum is described by a spin Hamiltonian with effective spin J = 1 2 and an anisotropic g-tensor with principal values g[100]= 2.0163, g[011] = 2.0536 and [011] = 2.0182. The hyperfine interaction with two ligand silicon nuclei is described by an approximately 〈111〉 axially symmetric tensor with A| = 132.5 MHz and A⊥ = 97.5 MHz. Diffusion of the magnetic 61Ni isotope leads to the appearance of resolved hyperfine structure in the spectrum. The results demonstrate a similarity of negative substitutional nickel in silicon to the NiS- centre in germanium and to the impurities PdS- and PtS- in silicon. © 1990.

引用

页码：393 / 398

页数：6

共 16 条

[1] ELECTRONIC-STRUCTURE OF PLATINUM IN SILICON [J].