NICKEL-RELATED DEEP LEVELS IN SILICON STUDIED BY COMBINED HALL-EFFECT AND DLTS MEASUREMENT

被引：13

作者：

KITAGAWA, H ^{[1
]}

NAKASHIMA, H ^{[1
]}

机构：

[1] KYUSHU UNIV,DEPT ELECT ENGN,FUKUOKA 812,JAPAN

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1987年 / 99卷 / 01期

关键词：

Deep Levels - DLTS Measurement - Nickel Doped Silicon;

D O I：

10.1002/pssa.2210990150

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K49 / K52

页数：4

共 10 条

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[4] PROPERTIES OF NICKEL IN SILICON
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[5] KIMERLING LC, 1981, I PHYS C SER, V59, P217
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[7] POINT-DEFECTS IN SILICON STUDIED BY NICKEL DIFFUSION
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[J]. PHYSICA B & C, 1983, 116 (1-3): : 323 - 327
[8] ENERGY-LEVELS AND SOLUBILITY OF ELECTRICALLY ACTIVE COBALT IN SILICON STUDIED BY COMBINED HALL AND DLTS MEASUREMENTS
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HASHIMOTO, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (03): : 373 - 374
[9] TOKAMURA Y, 1963, J APPL PHYS, V2, P542
[10] DISSOCIATIVE DIFFUSION OF NICKEL IN SILICON AND SELF-DIFFUSION OF SILICON
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (05) : 573 - &

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