CHARACTERIZATION OF PROPERTIES OF NICKEL IN SILICON USING THERMALLY STIMULATED CAPACITANCE METHOD

[1] THE SOLID SOLUBILITY OF NICKEL IN SILICON DETERMINED BY NEUTRON ACTIVATION ANALYSIS [J]. APPLIED PHYSICS LETTERS, 1962, 1 (01) : 19 - 20

[2] ELECTRICAL PROPERTIES OF HIGH-RESISTIVITY NICKEL-DOPED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (06) : 2644 - &

[3] PROPERTIES OF NICKEL IN SILICON [J]. PROCEEDINGS OF THE IEEE, 1969, 57 (09) : 1484 - &

[4] THERMAL CAPTURE OF ELECTRONS AND HOLES AT ZINC CENTERS IN SILICON [J]. SOLID-STATE ELECTRONICS, 1973, 16 (10) : 1133 - 1139

[5] PROPERTIES OF AU, PT, PD AND RH LEVELS IN SILICON MEASURED WITH A CONSTANT CAPACITANCE TECHNIQUE [J]. SOLID-STATE ELECTRONICS, 1974, 17 (11) : 1139 - 1145

[6] THERMAL AND OPTICAL EMISSION AND CAPTURE RATES AND CROSS SECTIONS OF ELECTRONS AND HOLES AT IMPERFECTION CENTERS IN SEMICONDUCTORS FROM PHOTO AND DARK JUNCTION CURRENT AND CAPACITANCE EXPERIMENTS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 759 - +

[7] TOKUMARU Y, 1963, JPN J APPL PHYS, V2, P542

[8] DISSOCIATIVE DIFFUSION OF NICKEL IN SILICON AND SELF-DIFFUSION OF SILICON [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (05) : 573 - &

[9] YOSHIDA M, 1964, JPN J APPL PHYS, V3, P521, DOI DOI 10.1143/JJAP.3.521

[10] DETERMINATION OF SPATIAL-DISTRIBUTION OF DEEP CENTERS FROM CAPACITANCE MEASUREMENTS OF PN JUNCTIONS [J]. APPLIED PHYSICS LETTERS, 1972, 21 (03) : 117 - +

[1] THE SOLID SOLUBILITY OF NICKEL IN SILICON DETERMINED BY NEUTRON ACTIVATION ANALYSIS [J]. APPLIED PHYSICS LETTERS, 1962, 1 (01) : 19 - 20

[2] ELECTRICAL PROPERTIES OF HIGH-RESISTIVITY NICKEL-DOPED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (06) : 2644 - &

[3] PROPERTIES OF NICKEL IN SILICON [J]. PROCEEDINGS OF THE IEEE, 1969, 57 (09) : 1484 - &

[4] THERMAL CAPTURE OF ELECTRONS AND HOLES AT ZINC CENTERS IN SILICON [J]. SOLID-STATE ELECTRONICS, 1973, 16 (10) : 1133 - 1139

[5] PROPERTIES OF AU, PT, PD AND RH LEVELS IN SILICON MEASURED WITH A CONSTANT CAPACITANCE TECHNIQUE [J]. SOLID-STATE ELECTRONICS, 1974, 17 (11) : 1139 - 1145

[6] THERMAL AND OPTICAL EMISSION AND CAPTURE RATES AND CROSS SECTIONS OF ELECTRONS AND HOLES AT IMPERFECTION CENTERS IN SEMICONDUCTORS FROM PHOTO AND DARK JUNCTION CURRENT AND CAPACITANCE EXPERIMENTS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 759 - +

[7] TOKUMARU Y, 1963, JPN J APPL PHYS, V2, P542

[8] DISSOCIATIVE DIFFUSION OF NICKEL IN SILICON AND SELF-DIFFUSION OF SILICON [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (05) : 573 - &

[9] YOSHIDA M, 1964, JPN J APPL PHYS, V3, P521, DOI DOI 10.1143/JJAP.3.521

[10] DETERMINATION OF SPATIAL-DISTRIBUTION OF DEEP CENTERS FROM CAPACITANCE MEASUREMENTS OF PN JUNCTIONS [J]. APPLIED PHYSICS LETTERS, 1972, 21 (03) : 117 - +