ELECTRON THERMAL EMISSION RATES OF NICKEL CENTERS IN SILICON

被引：10

作者：

JARAIZ, M

DUENAS, S

VICENTE, J

BAILON, L

BARBOLLA, J

机构：

[1] Univ de Valladolid, Spain, Univ de Valladolid, Spain

来源：

SOLID-STATE ELECTRONICS | 1986年 / 29卷 / 09期

关键词：

D O I：

10.1016/0038-1101(86)90008-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：883 / 884

页数：2

共 12 条

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[3]

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BROUSSEAU, M .

REVUE DE PHYSIQUE APPLIQUEE, 1980, 15 (04) :843-848

[5] CHARACTERIZATION OF PROPERTIES OF NICKEL IN SILICON USING THERMALLY STIMULATED CAPACITANCE METHOD [J].

CHIAVAROTTI, G ;

CONTI, M ;

MESSINA, A .

SOLID-STATE ELECTRONICS, 1977, 20 (11) :907-909

[6] ELECTRICAL PROPERTIES OF HIGH-RESISTIVITY NICKEL-DOPED SILICON [J].

CHUA, WB ;

ROSE, K .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (06) :2644-&

[7] PROPERTIES OF NICKEL IN SILICON [J].

GHANDHI, SK ;

THIEL, FL .

PROCEEDINGS OF THE IEEE, 1969, 57 (09) :1484-&

[8]

LEBEDEV AA, 1972, SOV PHYS SEMICOND+, V5, P1990

[9]

LEBEDEV AA, 1972, SOV PHYS SEMICOND+, V6, P96

[10]

TOKUMARU Y, 1963, JPN J APPL PHYS, V2, P542

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