A COMPREHENSIVE COMPUTER-PROGRAM FOR ION PENETRATION IN SOLIDS

被引：12

作者：

DESALVO, A ^{[1
]}

ROSA, R ^{[1
]}

机构：

[1] UNIV BOLOGNA,FAC INGN,IST CHIM,I-40126 BOLOGNA,ITALY

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1980年 / 47卷 / 1-4期

关键词：

D O I：

10.1080/00337578008209196

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：117 / 120

页数：4

共 9 条

[1] COMPUTER STUDIES OF DECHANNELING EFFECTS ON ION IMPLANTATION PROFILES [J].

DESALVO, A ;

ROSA, R ;

ZIGNANI, F .

LETTERE AL NUOVO CIMENTO, 1971, 2 (08) :390-+

[2] MONTE-CARLO CALCULATIONS ON SPATIAL-DISTRIBUTION OF IMPLANTED IONS IN SILICON [J].

DESALVO, A ;

ROSA, R .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 31 (01) :41-45

[3] DOSE DEPENDENCE OF PENETRATION AND DAMAGE PROFILES OF P+-CHANNELED IONS IN SILICON SIMULATED BY COMPUTER [J].

DESALVO, A ;

ROSA, R ;

ZIGNANI, F .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1975, 27 (1-2) :89-95

[4] COMPUTER EVALUATION OF PRIMARY DEPOSITED ENERGY PROFILES IN ION-IMPLANTED SILICON UNDER CHANNELING CONDITIONS [J].

DESALVO, A ;

ROSA, R ;

ZIGNANI, F .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (09) :3755-&

[5] PERIODIC DEPENDENCE OF ELECTRONIC STOPPING CROSS SECTION FOR ENERGETIC HEAVY IONS IN SOLIDS [J].

ELHOSHY, AH ;

GIBBONS, JF .

PHYSICAL REVIEW, 1968, 173 (02) :454-&

[6]

ISHIWARA H, 1975, 4TH P INT C ION IMPL, P423

[7]

RYSSEL H, 1977, 5TH P INT C ION IMPL, P727

[8]

ZIGNANI F, 1978, 1977 P INT C PHOT SO, P113

[9]

ZIGNANI F, 1980, RADIAT EFF, V47, P117

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