SELECTIVE AMPLIFICATION OF SELF-RESISTIVELY HEATED LASER-DIRECT-WRITTEN TUNGSTEN LINES

被引:14
作者
GOTTSLEBEN, O
STUKE, M
机构
关键词
D O I
10.1063/1.99768
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2230 / 2232
页数:3
相关论文
共 13 条
[1]   SUPPLEMENTAL MULTILEVEL INTERCONNECTS BY LASER DIRECT WRITING - APPLICATION TO GAAS DIGITAL INTEGRATED-CIRCUITS [J].
BLACK, JG ;
DORAN, SP ;
ROTHSCHILD, M ;
EHRLICH, DJ .
APPLIED PHYSICS LETTERS, 1987, 50 (15) :1016-1018
[2]   ELECTRICAL-PROPERTIES OF LASER CHEMICALLY DOPED SILICON [J].
DEUTSCH, TF ;
EHRLICH, DJ ;
RATHMAN, DD ;
SILVERSMITH, DJ ;
OSGOOD, RM .
APPLIED PHYSICS LETTERS, 1981, 39 (10) :825-827
[3]   LASER MICROCHEMICAL TECHNIQUES FOR REVERSIBLE RESTRUCTURING OF GATE-ARRAY PROTOTYPE CIRCUITS [J].
EHRLICH, DJ ;
TSAO, JY ;
SILVERSMITH, DJ ;
SEDLACEK, JHC ;
MOUNTAIN, RW ;
GRABER, WS .
IEEE ELECTRON DEVICE LETTERS, 1984, 5 (02) :32-35
[4]   HIGH-ACCURACY TUNING OF PLANAR MILLIMETER-WAVE CIRCUITS BY LASER PHOTOCHEMICAL ETCHING [J].
EHRLICH, DJ ;
WILLIAMS, DF ;
SEDLACEK, JHC ;
ROTHSCHILD, M ;
SCHWARZ, SE .
IEEE ELECTRON DEVICE LETTERS, 1987, 8 (03) :110-112
[5]  
Gargini P. A., 1981, International Electron Devices Meeting, P54
[6]  
JONES, 1980, CRC HDB CHEM PHYSICS, pE400
[7]  
MCCONICA CM, 1986, J ELECTROCHEM SOC, V133, P2543
[8]  
MILLER NE, 1982, SOLID STATE TECHNOL, V25, P85
[9]  
Moriya T., 1983, International Electron Devices Meeting 1983. Technical Digest, P550
[10]   KINETICS AND PROPERTIES OF CHEMICALLY VAPOR-DEPOSITED TUNGSTEN FILMS ON SILICON SUBSTRATES [J].
MOROSANU, CE ;
SOLTUZ, V .
THIN SOLID FILMS, 1978, 52 (02) :181-194