LASER MICROCHEMICAL TECHNIQUES FOR REVERSIBLE RESTRUCTURING OF GATE-ARRAY PROTOTYPE CIRCUITS

被引：31

作者：

EHRLICH, DJ ^{[1
]}

TSAO, JY ^{[1
]}

SILVERSMITH, DJ ^{[1
]}

SEDLACEK, JHC ^{[1
]}

MOUNTAIN, RW ^{[1
]}

GRABER, WS ^{[1
]}

机构：

[1] GOULD INC, GOULD RES CTR, ROLLING MEADOWS, IL 60008 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 02期

关键词：

D O I：

10.1109/EDL.1984.25822

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：32 / 35

页数：4

共 17 条

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[5]

EHRLICH DJ, 1981, APPL PHYS LETT, V39, P957, DOI 10.1063/1.92624

[6] LASER CHEMICAL TECHNIQUE FOR RAPID DIRECT WRITING OF SURFACE RELIEF IN SILICON [J].

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[7]

EHRLICH DJ, 1983, J VAC SCI TECHNOL B, V1, P969, DOI 10.1116/1.582718

[8]

EHRLICH DJ, UNPUB VLSI ELECTRONI, V7

[9]

EHRLICH DJ, UNPUB

[10] MODIFICATION OF SEMICONDUCTOR-DEVICE CHARACTERISTICS BY LASERS [J].

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IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1982, 26 (02) :171-176

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