ETCH PIT PATTERN OF GAAS CRYSTALS MADE BY LIGHT IRRADIATED ELECTROLYTIC ETCHING

被引：8

作者：

TAKAHASHI, K

机构：

[1] Central Research Laboratory, Hitachi Ltd., Tokyo

来源：

关键词：

D O I：

10.1143/JJAP.18.1741

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

[No abstract available]

引用

页码：1741 / 1746

页数：6

共 7 条

[1] ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS
ABRAHAMS, MS
BUIOCCHI, CJ
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2855 - &
[2] ETCH PITS AND DISLOCATIONS IN (100) GAAS WAFERS
ANGILELLO, J
POTEMSKI, RM
WOOLHOUSE, GR
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) : 2315 - 2316
[3] DISLOCATION ETCH PITS IN SINGLE CRYSTAL GAAS
GRABMAIER, JG
WATSON, CB
[J]. PHYSICA STATUS SOLIDI, 1969, 32 (01): : K13 - +
[4] HASHIZUME H, 1971, NIHON KESSHO GAKKAI, V13, P273
[5] KUHNENFELD FK, 1972, J ELECTROCHEM SOC SO, P1063
[6] ANODIC-OXIDATION OF GAAS IN AQUEOUS H2O2 SOLUTION
LOGAN, RA
SCHWARTZ, B
SUNDBURG, WJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (10) : 1385 - 1390
[7] TAKAHASHI K, UNPUBLISHED