DIFFUSION OF DELTA-DOPED BORON IN SILICON FOLLOWING OXIDATION

被引：3

作者：

ONEILL, AG

BARLOW, RD

BISWAS, RG

PHILLIPS, PJ

TAYLOR, S

GUNDLACH, A

机构：

[1] UNIV WARWICK,DEPT PHYS,COVENTRY CV4 7AL,W MIDLANDS,ENGLAND

[2] UNIV LIVERPOOL,DEPT ELECT ENGN & ELECTR,LIVERPOOL L69 3BX,ENGLAND

[3] UNIV EDINBURGH,DEPT ELECT ENGN,EDINBURGH EH9 3JL,MIDLOTHIAN,SCOTLAND

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 03期

关键词：

PLASMA; SILICON; DOPING;

D O I：

10.1049/el:19930180

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Samples from a silicon wafer containing a boron doped delta layer were exposed to plasma oxidation and rapid thermal processing (RTP). It is demonstrated experimentally for the first time that there is no enhanced diffusion resulting from oxidation by plasma anodisation, making it well suited to complement low temperature processing.

引用

页码：263 / 264

页数：2

共 8 条

[1] DIFFUSION OF SUBSTITUTIONAL IMPURITIES IN SILICON AT SHORT OXIDATION TIMES - AN INSIGHT INTO POINT-DEFECT KINETICS [J].