PROFILE DISTORTIONS AND ATOMIC MIXING IN SIMS ANALYSIS USING OXYGEN PRIMARY IONS

被引：104

作者：

WITTMAACK, K ^{[1
]}

WACH, W ^{[1
]}

机构：

[1] GESELL STRAHLEN & UMWELTFORSCH MBH, D-8042 NEUHERBERG, FED REP GER

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1981年 / 191卷 / 1-3期

关键词：

D O I：

10.1016/0029-554X(81)91024-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：327 / 334

页数：8

共 23 条

[1] ENERGY AND FLUENCE DEPENDENCE OF THE SPUTTERING YIELD OF SILICON BOMBARDED WITH ARGON AND XENON
BLANK, P
WITTMAACK, K
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) : 1519 - 1528
[2] ION SORPTION IN PRESENCE OF SPUTTERING
CARTER, G
COLLIGON, JS
LECK, JH
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1962, 79 (508): : 299 - &
[3] Clegg J. B., 1980, Surface and Interface Analysis, V2, P91, DOI 10.1002/sia.740020304
[4] SPUTTERING AND STRAIN OF SILICON BY ION IMPLANTATION
EERNISSE, EP
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (01) : 480 - &
[5] KEMPF J, 1970, SIMS, V2, P97
[6] RECOIL MIXING IN SOLIDS BY ENERGETIC ION-BEAMS
LITTMARK, U
HOFER, WO
[J]. NUCLEAR INSTRUMENTS & METHODS, 1980, 168 (1-3): : 329 - 342
[7] ION-BEAM SPUTTERING - EFFECT OF INCIDENT ION ENERGY ON ATOMIC MIXING IN SUBSURFACE LAYERS
MCHUGH, JA
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1974, 21 (04): : 209 - 215
[8] AN AES-SIMS STUDY OF SILICON OXIDATION INDUCED BY ION OR ELECTRON-BOMBARDMENT
REUTER, W
WITTMAACK, K
[J]. APPLICATIONS OF SURFACE SCIENCE, 1980, 5 (03): : 221 - 242
[9] Schulz F., 1973, Radiation Effects, V18, P211, DOI 10.1080/00337577308232124
[10] MODEL CALCULATION OF ION COLLECTION IN PRESENCE OF SPUTTERING .1. ZERO ORDER APPROXIMATION
SCHULZ, F
WITTMAACK, K
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 29 (01): : 31 - 40