STRESS MEASUREMENT OF GLOW-DISCHARGE PRODUCED A-GE-H THIN-FILMS AND ITS RELATION TO ELECTRONIC AND STRUCTURAL-PROPERTIES

被引：14

作者：

WICKBOLDT, P ^{[1
]}

MARQUES, F ^{[1
]}

JONES, SJ ^{[1
]}

PANG, D ^{[1
]}

TURNER, WA ^{[1
]}

PAUL, W ^{[1
]}

机构：

[1] BEIJING POLYTECH UNIV,BEIJING 100022,PEOPLES R CHINA

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷

关键词：

D O I：

10.1016/S0022-3093(05)80062-6

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Stress measurements are reported for thin films of a-Ge:H deposited under a large variety of conditions using glow discharge CVD. The stress is nonuniform with thickness, and, for films exhibiting high tensile stress, changes reversibly due to atmospheric contamination. Strong correlations are observed for stress with hydrogen content, structure, and photoresponse. In particular, higher photoresponse is observed for films with a higher compressive stress.

引用

页码：83 / 86

页数：4

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