RADIATION EFFECTS ON AC-COUPLED MICROSTRIP SILICON DETECTORS

被引：9

作者：

BACCHETTA, N

BISELLO, D

BOLLA, G

CANALI, C

FUOCHI, PG

PACCAGNELLA, A

机构：

[1] UNIV PADUA,DIPARTIMENTO FIS,I-35131 PADUA,ITALY

[2] UNIV PADUA,DIPARTIMENTO ELETTRON & INFORMAT,I-35131 PADUA,ITALY

[3] INFN,I-35131 PADUA,ITALY

[4] CNR,IST FRAE,I-40126 BOLOGNA,ITALY

[5] UNIV MODENA,FAC INGN,I-41100 MODENA,ITALY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1993年 / 326卷 / 1-2期

关键词：

D O I：

10.1016/0168-9002(93)90380-Z

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The radiation hardness of FOXFET biased ac-coupled microstrip detectors, foreseen for the upgraded version of the vertex detectors (SVX') of the CDF experiment, has been studied. The detectors have been irradiated with Co-60 gamma rays with doses up to 1 Mrad. Two basic effects have been investigated: a variation of the switching voltage up to 100% due to oxide charge accumulation and Si/SiO2 interface trap formation, and a 12-fold increase of the total leakage current, likely to come from surface damage. Moreover, a 10-fold decrease of the FOXFET dynamic resistance is observed at low gate bias. Post-irradiation annealing effects at room temperature of the electrical detector parameters are currently under investigation, in particular on a single shot 1 Mrad irradiated device. Recovery phenomena toward the pre-irradiation values are observed only for the switching voltage due to the annealing of trapped oxide charge.

引用

页码：381 / 385

页数：5

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