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MOBILITY MEASUREMENTS WITH A STANDARD CONTACT RESISTANCE PATTERN

被引：14
作者：
LOOK, DC
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 04期
关键词：
D O I：
10.1109/EDL.1987.26588
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：162 / 164
页数：3
相关论文
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[3]   SCHOTTKY-BARRIER PROFILING TECHNIQUES IN SEMICONDUCTORS - GATE CURRENT AND PARASITIC RESISTANCE EFFECTS [J].
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[4]   CLASSICAL MAGNETORESISTANCE MEASUREMENTS IN ALXGA1-XAS/GAAS MODFET STRUCTURES - DETERMINATION OF MOBILITIES [J].
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