CLASSICAL MAGNETORESISTANCE MEASUREMENTS IN ALXGA1-XAS/GAAS MODFET STRUCTURES - DETERMINATION OF MOBILITIES

被引：19

作者：

LOOK, DC

NORRIS, GB

机构：

来源：

SOLID-STATE ELECTRONICS | 1986年 / 29卷 / 02期

关键词：

D O I：

10.1016/0038-1101(86)90034-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：159 / 165

页数：7

共 19 条

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[8] SCHOTTKY-BARRIER MOBILITY PROFILING MEASUREMENTS WITH GATE-CURRENT CORRECTIONS [J].

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SOLID-STATE ELECTRONICS, 1985, 28 (05) :521-527

[9] SCHOTTKY-BARRIER PROFILING TECHNIQUES IN SEMICONDUCTORS - GATE CURRENT AND PARASITIC RESISTANCE EFFECTS [J].

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[10] MAGNETORESISTANCE METHOD TO DETERMINE GAAS AND ALXGA1-XAS MOBILITIES IN ALXGA1-XAS/GAAS MODULATION-DOPED FIELD-EFFECT TRANSISTOR STRUCTURES [J].

LOOK, DC ;

NORRIS, GB ;

KOPP, W ;

HENDERSON, T ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1985, 47 (03) :267-269

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