MAGNETORESISTANCE METHOD TO DETERMINE GAAS AND ALXGA1-XAS MOBILITIES IN ALXGA1-XAS/GAAS MODULATION-DOPED FIELD-EFFECT TRANSISTOR STRUCTURES

被引：13

作者：

LOOK, DC

NORRIS, GB

KOPP, W

HENDERSON, T

MORKOC, H

机构：

[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 03期

关键词：

D O I：

10.1063/1.96186

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：267 / 269

页数：3

相关论文

共 15 条

[1] COMPREHENSIVE ANALYSIS OF SI-DOPED ALXGA1-XAS (X=0 TO 1) - THEORY AND EXPERIMENTS
CHAND, N
HENDERSON, T
KLEM, J
MASSELINK, WT
FISCHER, R
CHANG, YC
MORKOC, H
[J]. PHYSICAL REVIEW B, 1984, 30 (08): : 4481 - 4492
[2] FORD W, 1982, SEMIINSULATING 3 5 M, P352
[3] MAGNETOTRANSCONDUCTANCE MOBILITY MEASUREMENTS OF GAAS-MESFETS
JAY, PR
WALLIS, RH
[J]. ELECTRON DEVICE LETTERS, 1981, 2 (10): : 265 - 267
[4] Look D. C., 1984, Semi-Insulating III-V materials, P397
[5] Look D C, UNPUB
[6] SCHOTTKY-BARRIER PROFILING TECHNIQUES IN SEMICONDUCTORS - GATE CURRENT AND PARASITIC RESISTANCE EFFECTS
LOOK, DC
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) : 377 - 383
[7] ELECTRONIC-PROPERTIES OF A SEMICONDUCTOR SUPER-LATTICE .2. LOW-TEMPERATURE MOBILITY PERPENDICULAR TO THE SUPER-LATTICE
MORI, S
ANDO, T
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1980, 48 (03) : 865 - 873
[8] CAPACITANCE-VOLTAGE CHARACTERISTICS IN MODULATION DOPED HETEROJUNCTION FETS
NORRIS, GB
LOOK, DC
KOOP, W
KLEM, J
MORKOC, H
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 797 - 797
[9] NORRIS GB, 1985, APPL PHYS LETT, V47
[10] TWO-DIMENSIONAL ELECTRONIC SYSTEMS FOR HIGH-SPEED DEVICE APPLICATIONS
PEARSALL, TP
[J]. SURFACE SCIENCE, 1984, 142 (1-3) : 529 - 544