SCHOTTKY-BARRIER PROFILING TECHNIQUES IN SEMICONDUCTORS - GATE CURRENT AND PARASITIC RESISTANCE EFFECTS

被引：28

作者：

LOOK, DC

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 02期

关键词：

D O I：

10.1063/1.334762

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：377 / 383

页数：7

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