POLARIZATION AND THE HALDANE-ANDERSON MODEL OF DEFECTS IN NONMETALS

被引：24

作者：

FOWLER, WB

ELLIOTT, RJ

机构：

[1] LEHIGH UNIV,SHERMAN FAIRCHILD LAB,BETHLEHEM,PA 18015

[2] UNIV OXFORD,DEPT THEORET PHYS,OXFORD OX1 3NP,ENGLAND

来源：

PHYSICAL REVIEW B | 1986年 / 34卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.34.5525

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5525 / 5529

页数：5

共 26 条

[11] SIMPLE MODEL OF MULTIPLE CHARGE STATES OF TRANSITION-METAL IMPURITIES IN SEMICONDUCTORS [J].

HALDANE, FDM ;

ANDERSON, PW .

PHYSICAL REVIEW B, 1976, 13 (06) :2553-2559

[12] COULOMB INTERACTIONS IN SEMICONDUCTORS AND INSULATORS [J].

HARRISON, WA .

PHYSICAL REVIEW B, 1985, 31 (04) :2121-2132

[13] OPTICAL SPECTROSCOPY OF THE TRIVALENT SILICON DEFECT AT THE SI-SIO2 INTERFACE [J].

JOHNSON, NM ;

JACKSON, WB ;

MOYER, MD .

PHYSICAL REVIEW B, 1985, 31 (02) :1194-1197

[14]

Kittel C, 1963, QUANTUM THEORY SOLID, P148

[15] QUASI-BAND CRYSTAL-FIELD METHOD FOR CALCULATING THE ELECTRONIC-STRUCTURE OF LOCALIZED DEFECTS IN SOLIDS [J].

LINDEFELT, U ;

ZUNGER, A .

PHYSICAL REVIEW B, 1982, 26 (02) :846-895

[16]

MOTT NF, 1948, ELECTRONIC PROCESSES

[17]

MOTT NF, 1938, T FARADAY SOC, V34, P485, DOI DOI 10.1039/TF9383400485

[18] EVALUATION OF ONE-CENTRE INTEGRALS IN SEMI-EMPIRICAL MOLECULAR ORBITAL THEORY [J].

OLEARI, L ;

DISIPIO, L ;

DEMICHEL.G .

MOLECULAR PHYSICS, 1966, 10 (02) :97-&

[19] THEORY OF TETRAHEDRAL-SITE INTERSTITIAL S-BONDED AND P-BONDED IMPURITIES IN SI [J].

SANKEY, OF ;

DOW, JD .

PHYSICAL REVIEW B, 1983, 27 (12) :7641-7653

[20] MULTIPLE CHARGE-STATES OF TRANSITION-METAL IMPURITIES [J].

STONEHAM, AM ;

SANGSTER, MJL .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1981, 43 (04) :609-619

← 1 2 3 →