OPTICAL SPECTROSCOPY OF THE TRIVALENT SILICON DEFECT AT THE SI-SIO2 INTERFACE

被引：20

作者：

JOHNSON, NM

JACKSON, WB

MOYER, MD

机构：

来源：

PHYSICAL REVIEW B | 1985年 / 31卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.31.1194

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1194 / 1197

页数：4

共 16 条

[1] SI-29 HYPERFINE-STRUCTURE OF UNPAIRED SPINS AT THE SI/SIO2 INTERFACE [J].

BROWER, KL .

APPLIED PHYSICS LETTERS, 1983, 43 (12) :1111-1113

[2]

BROWER KL, UNPUB J ELECTRON MAT

[3] ESR CENTERS, INTERFACE STATES, AND OXIDE FIXED CHARGE IN THERMALLY OXIDIZED SILICON WAFERS [J].

CAPLAN, PJ ;

POINDEXTER, EH ;

DEAL, BE ;

RAZOUK, RR .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) :5847-5854

[4] ELECTRONIC-STRUCTURE OF SILICON [J].

CHELIKOWSKY, JR ;

COHEN, ML .

PHYSICAL REVIEW B, 1974, 10 (12) :5095-5107

[5]

EDWARDS AH, UNPUB J ELECTRON MAT

[6] OPTICAL SPECTRUM OF SEMICONDUCTOR SURFACE STATES FROM FRUSTRATED TOTAL INTERNAL REFLECTIONS [J].

HARRICK, NJ .

PHYSICAL REVIEW, 1962, 125 (04) :1165-&

[7] PHOTOTHERMAL DEFLECTION SPECTROSCOPY AND DETECTION [J].

JACKSON, WB ;

AMER, NM ;

BOCCARA, AC ;

FOURNIER, D .

APPLIED OPTICS, 1981, 20 (08) :1333-1344

[8] OPTICAL-ABSORPTION SPECTRA OF SURFACE OR INTERFACE STATES IN HYDROGENATED AMORPHOUS-SILICON [J].

JACKSON, WB ;

BIEGELSEN, DK ;

NEMANICH, RJ ;

KNIGHTS, JC .

APPLIED PHYSICS LETTERS, 1983, 42 (01) :105-107

[9]

JOHNSON NM, 1981, J VAC SCI TECHNOL, V19, P390, DOI 10.1116/1.571070

[10] CHARACTERISTIC ELECTRONIC DEFECTS AT THE SI-SIO2 INTERFACE [J].

JOHNSON, NM ;

BIEGELSEN, DK ;

MOYER, MD ;

CHANG, ST ;

POINDEXTER, EH ;

CAPLAN, PJ .

APPLIED PHYSICS LETTERS, 1983, 43 (06) :563-565

← 1 2 →