PROPOSAL FOR A NEW SUB-MICRON DIMENSION REFERENCE FOR AN ELECTRON-BEAM METROLOGY SYSTEM

被引:48
作者
NAKAYAMA, Y [1 ]
OKAZAKI, S [1 ]
SUGIMOTO, A [1 ]
机构
[1] HITACHI LTD,MUSASHI WORKS,KODAIRA,TOKYO 187,JAPAN
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 06期
关键词
D O I
10.1116/1.584135
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1930 / 1933
页数:4
相关论文
共 14 条
[1]  
AOKI M, 1988, P IEEE INT SOLID STA, P250
[3]   ANISOTROPIC ETCHING OF SILICON [J].
BEAN, KE .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) :1185-1193
[4]   ELECTRON-BEAM METROLOGY AND INSPECTION. [J].
Brunner, Matthias ;
Schmid, R. .
Microelectronic Engineering, 1987, 7 (01) :41-60
[5]  
MATSUOKA G, 1987, J VAC SCI TECHNOL B, V85, P79
[6]   LINEWIDTH MEASUREMENT WITH AN OPTICAL MICROSCOPE - EFFECT OF OPERATING-CONDITIONS ON IMAGE PROFILE [J].
NYYSSONEN, D .
APPLIED OPTICS, 1977, 16 (08) :2223-2230
[7]  
NYYSSONEN D, 1980, SPIE, V222, P119
[8]  
ONTAKA T, 1985, SPIE, V565, P205
[9]   X-RAY ZONE PLATES FABRICATED USING ELECTRON-BEAM AND X-RAY-LITHOGRAPHY [J].
SHAVER, DC ;
FLANDERS, DC ;
CEGLIO, NM ;
SMITH, HI .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06) :1626-1630
[10]  
Singer P. H., 1983, Semiconductor International, V6, P48