LINEWIDTH ENHANCEMENT FACTOR IN INGAASP/INP MODULATION-DOPED STRAINED MULTIPLE-QUANTUM-WELL LASERS

被引：17

作者：

KANO, F

YAMANAKA, T

YAMAMOTO, N

MAWATARI, H

TOHMORI, Y

YOSHIKUNI, Y

机构：

[1] NTT Opto-electronics Laboratories

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1994年 / 30卷 / 02期

关键词：

D O I：

10.1109/3.283801

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Reduction of the linewidth enhancement factor alpha is studied in InP-based strained multiple-quantum-well (MQW) lasers. Theoretical analysis shows that the alpha-parameter is greatly reduced in modulation-doped strained MQW lasers and may be zero while keeping positive gain. The experimental evaluation exhibits a very small alpha-parameter of around 1 in InGaAsP/InP modulation-doped strained MQW lasers. As a result of the small alpha-parameter, the linewidth-power product is effectively reduced in 1.5-mum DFB lasers with the modulation-doped strained MQW structure. The narrow spectral linewidth around 100 kHz were also obtained reproducibly in 1.5-mum modulation-doped strained MQW DFB lasers.

引用

页码：533 / 537

页数：5

共 15 条

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