EVALUATION OF SURFACE DAMAGE ON GAAS ETCHED WITH AN ELECTRON-CYCLOTRON-RESONANCE SOURCE

被引:22
作者
KO, KK [1 ]
PANG, SW [1 ]
BROCK, T [1 ]
COLE, MW [1 ]
CASAS, LM [1 ]
机构
[1] USA,RES LAB,FT MONMOUTH,NJ 07703
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 06期
关键词
D O I
10.1116/1.587517
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:3382 / 3387
页数:6
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