RAMAN-STUDY OF DE-RELAXATION AND DEFECTS IN AMORPHOUS-SILICON INDUCED BY MEV ION-BEAMS

被引：28

作者：

ROORDA, S ^{[1
]}

POATE, JM ^{[1
]}

JACOBSON, DC ^{[1
]}

DENNIS, BS ^{[1
]}

DIERKER, S ^{[1
]}

SINKE, WC ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 21期

关键词：

D O I：

10.1063/1.102984

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Raman spectroscopy is used as a probe of the state of amorphous Si (a-Si) and damaged crystalline Si. MeV ion beams have been used to irradiate structurally relaxed a-Si. When the density of Si atoms displaced by nuclear collisions exceeds 5%, the a-Si is ''de-relaxed'', and thus returns to its as-implanted state. This behavior is an indication that point defect complexes exist in a-Si and play an important role in the process of structural relaxation.

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页码：2097 / 2099

页数：3

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