HETEROEPITAXIAL GROWTH OF QUATERNARY BAXSR1-XTIO3 THIN-FILMS BY ARF EXCIMER-LASER ABLATION

被引：33

作者：

KOBAYASHI, H

KOBAYASHI, T

机构：

[1] Department of Electrical Engineering, Osaka University, Osaka, 560

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1994年 / 33卷 / 4A期

关键词：

FIELD-EFFECT TRANSISTOR (FET); SRTIO3; BAXSR1-XTIO3; FOURIER TRANSFORM INFRARED (FTIR); DIELECTRIC CONSTANT; EXCIMER LASER ABLATION;

D O I：

10.1143/JJAP.33.L533

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Highly polarizable BaxSr1-xTiO3 (X=0 approximately 1) (BSTO) thin films have been grown heteroepitaxially by the ArF excimer laser ablation method. They were characterized by X-ray diffraction, reflection high-energy electron diffraction (RHEED), capacitance-voltage (C-V), Fourier transform infrared (FTIR) and UV spectroscopic measurements, and x-dependent properties were studied systematically. The dielectric properties of the epitaxial BSTO films were consistent with data from ceramic bulk. However, the optical probes (FTIR and UV spectrometry) indicated the occurrence of microscopic composition fluctuation in the quaternary systems.

引用

页码：L533 / L536

页数：4

共 15 条

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