ALTERNATIVE PRECURSORS FOR III-V MOVPE CRITERIA FOR EVALUATION

被引:25
作者
BRAUERS, A
机构
[1] Institute of Semiconductor Electronics, Technical University Aachen
关键词
D O I
10.1016/0022-0248(91)90472-H
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Requirements on precursors are formulated and approaches to determine the suitability of new group III and group V source materials discussed. Among these, study of the shape and the position of the Arrhenius plot of the growth rate is of prior importance to determine the potential of source material combinations for uniform deposition of high purity films. The advanced quality of the materials grown from coordinatively saturated precursors will be shown. As a replacement for the group V hydride bulk sources, in situ generation of such compounds is addressed.
引用
收藏
页码:281 / 289
页数:9
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