VAPOR-PHASE EPITAXIAL MATERIALS FOR LED APPLICATIONS

被引：83

作者：

CRAFORD, MG ^{[1
]}

GROVES, WO ^{[1
]}

机构：

[1] MONSANTO COMMERCIAL PROD CO,ST LOUIS,MO 63166

来源：

关键词：

D O I：

10.1109/PROC.1973.9175

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：862 / 880

页数：19

共 91 条

[11] BURD JW, 1972, F3361571C CONTR
[12] BURD JW, PRIVATE COMMUNICATIO
[13] BURMEIST.RA, 1969, T METALL SOC AIME, V245, P565
[14] BURMEISTER RA, 1969, T METALL SOC AIME, V245, P587
[15] PREPARATION OF HIGH PURITY EPITAXIAL INF
CLARKE, RC
JOYCE, BD
WILGOSS, WHE
[J]. SOLID STATE COMMUNICATIONS, 1970, 8 (14) : 1125 - &
[16] Craford M. G., 1973, Journal of Electronic Materials, V2, P137, DOI 10.1007/BF02658108
[17] RADIATIVE RECOMBINATION MECHANISMS IN GAASP DIODES WITH AND WITHOUT NITROGEN DOPING
CRAFORD, MG
SHAW, RW
HERZOG, AH
GROVES, WO
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (10) : 4075 - &
[18] ELECTROLUMINESCENCE AND ELECTRICAL PROPERTIES OF HIGH-PURITY VAPOR-GROWN GAP
CRAFORD, MG
GROVES, WO
HERZOG, AH
HILL, DE
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (07) : 2751 - +
[19] CRAFORD MG, 1973, PROGR SOLID STATE CH, V8
[20] EPITAXIAL GAAS FILMS DEPOSITED BY VACUUM EVAPORATION
DAVEY, JE
PANKEY, T
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (04) : 1941 - &