PHOTOLUMINESCENCE OF SINGLE INAS QUANTUM DOTS OBTAINED BY SELF-ORGANIZED GROWTH ON GAAS

We present photoluminescence data on InAs quantum dots grown by molecular beam epitaxy on GaAs. Through the reduction of the number of emitting dots in small mesa structures, we evidence narrow lines in the spectra, each associated with a single InAs dot. Beyond the statistical analysis allowed by this technique, our results indicate short capture and relaxation times into the dots. This approach opens the route towards the detailed optical study of high quality easily fabricated single semiconductor quantum dots.