RADIATION-DOSE AT SILICON-SAPPHIRE INTERFACE DUE TO ELECTRON-BEAM ALUMINIZATION

被引：4

作者：

GALLOWAY, KF

MAYO, S

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 04期

关键词：

D O I：

10.1063/1.325075

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2586 / 2588

页数：3

共 14 条

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