RADIATION-DOSE AT SILICON-SAPPHIRE INTERFACE DUE TO ELECTRON-BEAM ALUMINIZATION

被引：4

作者：

GALLOWAY, KF

MAYO, S

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 04期

关键词：

D O I：

10.1063/1.325075

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2586 / 2588

页数：3

相关论文

共 14 条

[11] RADIATION-INDUCED CHARGE TRAPPING AT SILICON SAPPHIRE SUBSTRATE INTERFACE [J].

NEAMEN, D ;

SHEDD, W ;

BUCHANAN, B .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1974, NS21 (06) :211-216

[12] INVESTIGATION OF RADIATION EFFECTS AND HARDENING PROCEDURES FOR CMOS-SOS [J].

PEEL, JL ;

PANCHOLY, RK ;

KUHLMANN, GJ ;

OKI, TJ ;

WILLIAMS, RA .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) :2185-2189

[13] LEAKAGE CURRENT PHENOMENA IN IRRADIATED SOS DEVICES [J].

SROUR, JR ;

OTHMER, S ;

CHEN, SC .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (06) :2119-2127

[14]

Veigele Wm. J., 1973, Atomic Data, V5, P51, DOI 10.1016/S0092-640X(73)80015-4