LOW-TEMPERATURE MICROWAVE CHARACTERISTICS OF PSEUDOMORPHIC INXGA1-XAS/IN0.52AL0.48AS MODULATION-DOPED FIELD-EFFECT TRANSISTORS

被引：9

作者：

LAI, R ^{[1
]}

BHATTACHARYA, PK ^{[1
]}

ALTEROVITZ, SA ^{[1
]}

DOWNEY, AN ^{[1
]}

CHOREY, C ^{[1
]}

机构：

[1] NASA,LEWIS RES CTR,SOLID STATE TECHNOL BRANCH,CLEVELAND,OH 44135

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 12期

基金：

美国国家航空航天局;

关键词：

D O I：

10.1109/55.63041

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low-temperature microwave measurements of both lattice-matched and pseudomorphic InxGa1-xAs/In0.52Al0.48As (x = 0.53, 0.60, and 0.70) channel MODFET's on InP substrates have been carried out in a cryogenic measurement system. The measurements were done in the temperature range of 77 to 300 K and in the frequency range of 0.5 to 11.0 GHz at different bias conditions. The cutoff frequency (fT) for the Inx.Ga1_ xAs/In0.52AI0.48As MODFET's improved from 22 to 29 GHz, 29 to 38 GHz, and 39 to 51 GHz, for x = 0.53, 0.60, and 0.70, respectively, as the temperature was lowered from 300 to 77 K, which is approximately a 31% increase at each composition, and no degradations were observed in device performance. These results indicate an excellent potential of the pseudomorphic devices at low temperatures. © 1990 IEEE

引用

页码：564 / 566

页数：3

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