POINT DEFECT CALCULATIONS IN DIAMOND-TYPE CRYSTALS BY EXTENDED HUCKEL METHOD .2. SUBSTITUTIONAL IMPURITY PROBLEM

被引：56

作者：

LARKINS, FP

机构：

来源：

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS | 1971年 / 4卷 / 18期

关键词：

D O I：

10.1088/0022-3719/4/18/013

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：3077 / &

共 19 条

[1] ABSORPTION OF OXYGEN IN SILICON IN NEAR AND FAR INFRARED [J].

BOSOMWORTH, DR ;

HAYES, W ;

SPRAY, ARL ;

WATKINS, GD .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1970, 317 (1528) :133-+

[2]

BURNSTEIN E, 1956, J PHYS CHEM SOLIDS, V1, P65

[3] INFLUENCE OF HYDROSTATIC PRESSURE AND TEMPERATURE ON DEEP DONOR LEVELS OF SULFUR IN SILICON [J].

CAMPHAUSEN, DL ;

JAMES, HM ;

SLADEK, RJ .

PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (06) :1899-+

[4]

CLEMENTI I, 1963, J CHEM PHYS, V38, P2686

[5] BOUND EXCITONS AND DONOR-ACCEPTOR PAIRS IN NATURAL AND SYNTHETIC DIAMOND [J].

DEAN, PJ .

PHYSICAL REVIEW, 1965, 139 (2A) :A588-&

[6] ULTRAVIOLET INTRINSIC AND EXTRINSIC PHOTOCONDUCTIVITY OF NATURAL DIAMOND [J].

DENHAM, P ;

LIGHTOWLERS, EC ;

DEAN, PJ .

PHYSICAL REVIEW, 1967, 161 (03) :762-+

[7] HIGHER DONOR EXCITED STATES FOR PROLATE-SPHEROID CONDUCTION BANDS - A REEVALUATION OF SILICON AND GERMANIUM [J].

FAULKNER, RA .

PHYSICAL REVIEW, 1969, 184 (03) :713-&

[8] SHALLOW IMPURITY STATES IN SILICON AND GERMANIUM [J].

KOHN, W .

SOLID STATE PHYSICS-ADVANCES IN RESEARCH AND APPLICATIONS, 1957, 5 :257-320

[9] POINT DEFECT CALCULATIONS IN DIAMOND-TYPE CRYSTALS BY EXTENDED HUCKEL METHOD .1. GENERAL THEORY AND VACANCY PROBLEM [J].

LARKINS, FP .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (18) :3065-&

[10]

LUDWIG GW, 1965, PHYS REV, V137, P1520

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