ROLE OF SCATTERING BY SURFACE-ROUGHNESS IN SILICON INVERSION LAYERS

被引：137

作者：

CHENG, YC ^{[1
]}

SULLIVAN, EA ^{[1
]}

机构：

[1] BELL NO RES,STN C,OTTAWA,ONTARIO,CANADA

来源：

SURFACE SCIENCE | 1973年 / 34卷 / 03期

关键词：

D O I：

10.1016/0039-6028(73)90038-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：717 / 731

页数：15

共 30 条

[11]

GREENE RF, 1969, MOL PROCESSES SOLID, P239

[12]

GREY PV, 1966, APPL PHYS LETT, V8, P31

[13] EXPERIMENTAL STUDY OF SEMICONDUCTOR SURFACE CONDUCTIVITY [J].

GROSVALET, J ;

JUND, C ;

MOTSCH, C ;

POIRIER, R .

SURFACE SCIENCE, 1966, 5 (01) :49-+

[14] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J].

GROVE, AS ;

DEAL, BE ;

SNOW, EH ;

SAH, CT .

SOLID-STATE ELECTRONICS, 1965, 8 (02) :145-+

[15] SEMICONDUCTOR INVERSION LAYERS AND PHONONS IN HALF-SPACE [J].

KAWAJI, S ;

NAKAMURA, K ;

EZAWA, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1972, 9 (02) :762-&

[16]

KAWAJI S, 1971, P INT C SOLID SURFAC

[17] STABILIZATION OF SIO2 PASSIVATION LAYERS WITH P2O5 [J].

KERR, DR ;

LOGAN, JS ;

BURKHARDT, PJ ;

PLISKIN, WA .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) :376-&

[18] EFFECT OF HCL AND CL2 ON THERMAL OXIDATION OF SILICON [J].

KRIEGLER, RJ ;

CHENG, YC ;

COLTON, DR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (03) :388-&

[19]

LANE CH, 1968, IEEE T ELECTRON DEVI, VED15, P998

[20]

LEISTIKO O, 1965, IEEE T ELECTRON DEVI, VED12, P248

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