DEPENDENCE OF THE SATURATION OF LIGHT-INDUCED DEFECT DENSITY IN A-SI-H ON TEMPERATURE AND LIGHT-INTENSITY

被引：11

作者：

ISOMURA, M ^{[1
]}

HATA, N ^{[1
]}

WAGNER, S ^{[1
]}

机构：

[1] PRINCETON UNIV,DEPT ELECT ENGN,PRINCETON,NJ 08544

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 11期

关键词：

AMORPHOUS SILICON; STAEBLER-WRONSKI EFFECT; LIGHT-INDUCED DEFECT; TEMPERATURE; INTENSITY; SATURATION;

D O I：

10.1143/JJAP.31.3500

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied the temperature and intensity dependence of the saturated density of light-induced defects (N(sat)) in hydrogenated amorphous silicon (a-Si:H), established by high-intensity Kr+ laser illumination. The saturation value is insensitive to temperature below about 90-degrees-C. Above 90-degrees-C, N(sat) drops with increasing temperature. This behavior can be explained within the defect pool model by a limited number of defect sites coupled with the concept of defect equilibrium. The experimental data suggest that the tail states do not direcily affect N(sat) in device-quality a-Si:H.

引用

页码：3500 / 3505

页数：6

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