ANOMALOUS ELECTRIC-FIELD AND TEMPERATURE-DEPENDENCE OF COLLECTOR MULTIPLICATION IN INP/GA0.47IN0.53AS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：55

作者：

RITTER, D

HAMM, RA

FEYGENSON, A

PANISH, MB

机构：

[1] AT and T Bell Laboratories, Murray Hill

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 25期

关键词：

D O I：

10.1063/1.106751

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The collector multiplication in InP/Ga0.47In0.53As heterojunction bipolar transistors was found to increase with temperature, and to have a weak electric field dependence. This anomalous behavior has a profound impact on device characteristics.

引用

页码：3150 / 3152

页数：3

共 11 条

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