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COMPARISON OF SOLAR-CELL PERFORMANCE TO CALCULATIONS USING DIFFERENT ENERGY BAND-GAP NARROWING MODELS
被引:5
作者
:
WEAVER, HT
论文数:
0
引用数:
0
h-index:
0
WEAVER, HT
机构
:
来源
:
APPLIED PHYSICS LETTERS
|
1980年
/ 37卷
/ 11期
关键词
:
D O I
:
10.1063/1.91721
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:1009 / 1011
页数:3
相关论文
共 10 条
[1]
CHAPPELL TI, 1969, IEEE T ELECTRON DEVI, V16, P64
[2]
THEORETICAL EFFECTS OF SURFACE DIFFUSED REGION LIFETIME MODELS ON SILICON SOLAR-CELLS
DUNBAR, PM
论文数:
0
引用数:
0
h-index:
0
机构:
N CAROLINA STATE UNIV,RALEIGH,NC 27607
N CAROLINA STATE UNIV,RALEIGH,NC 27607
DUNBAR, PM
HAUSER, JR
论文数:
0
引用数:
0
h-index:
0
机构:
N CAROLINA STATE UNIV,RALEIGH,NC 27607
N CAROLINA STATE UNIV,RALEIGH,NC 27607
HAUSER, JR
[J].
SOLID-STATE ELECTRONICS,
1977,
20
(08)
: 697
-
701
[3]
FISTUL VI, 1969, HEAVILY DOPED SEMICO, P51
[4]
BANDGAP NARROWING IN MODERATELY TO HEAVILY DOPED SILICON
LANYON, HPD
论文数:
0
引用数:
0
h-index:
0
机构:
ITEK CORP,LEXINGTON,MA 02173
ITEK CORP,LEXINGTON,MA 02173
LANYON, HPD
TUFT, RA
论文数:
0
引用数:
0
h-index:
0
机构:
ITEK CORP,LEXINGTON,MA 02173
ITEK CORP,LEXINGTON,MA 02173
TUFT, RA
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(07)
: 1014
-
1018
[5]
INFLUENCE OF BANDGAP NARROWING ON PERFORMANCE OF SILICON N-P SOLAR-CELLS
LAUWERS, P
论文数:
0
引用数:
0
h-index:
0
LAUWERS, P
VANMEERBERGEN, J
论文数:
0
引用数:
0
h-index:
0
VANMEERBERGEN, J
BULTEEL, P
论文数:
0
引用数:
0
h-index:
0
BULTEEL, P
MERTENS, R
论文数:
0
引用数:
0
h-index:
0
MERTENS, R
VANOVERSTRAETEN, R
论文数:
0
引用数:
0
h-index:
0
VANOVERSTRAETEN, R
[J].
SOLID-STATE ELECTRONICS,
1978,
21
(05)
: 747
-
752
[6]
LI SS, 1968, PR INST ELECTR ELECT, V56, P1256
[7]
UNIFIED MODEL OF FUNDAMENTAL LIMITATIONS ON THE PERFORMANCE OF SILICON SOLAR-CELLS
REDFIELD, D
论文数:
0
引用数:
0
h-index:
0
REDFIELD, D
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1980,
27
(04)
: 766
-
771
[8]
MEASUREMENTS OF BANDGAP NARROWING IN SI BIPOLAR-TRANSISTORS
SLOTBOOM, JW
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
SLOTBOOM, JW
DEGRAAFF, HC
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
DEGRAAFF, HC
[J].
SOLID-STATE ELECTRONICS,
1976,
19
(10)
: 857
-
862
[9]
SHOCKLEY-LIKE EQUATIONS FOR THE CARRIER DENSITIES AND THE CURRENT FLOWS IN MATERIALS WITH A NONUNIFORM COMPOSITION
VANVLIET, KM
论文数:
0
引用数:
0
h-index:
0
机构:
LOUISIANA STATE UNIV,DEPT ELECT ENGN,BATON ROUGE,LA 70803
LOUISIANA STATE UNIV,DEPT ELECT ENGN,BATON ROUGE,LA 70803
VANVLIET, KM
MARSHAK, AH
论文数:
0
引用数:
0
h-index:
0
机构:
LOUISIANA STATE UNIV,DEPT ELECT ENGN,BATON ROUGE,LA 70803
LOUISIANA STATE UNIV,DEPT ELECT ENGN,BATON ROUGE,LA 70803
MARSHAK, AH
[J].
SOLID-STATE ELECTRONICS,
1980,
23
(01)
: 49
-
53
[10]
WEAVER HF, UNPUBLISHED
←
1
→
共 10 条
[1]
CHAPPELL TI, 1969, IEEE T ELECTRON DEVI, V16, P64
[2]
THEORETICAL EFFECTS OF SURFACE DIFFUSED REGION LIFETIME MODELS ON SILICON SOLAR-CELLS
DUNBAR, PM
论文数:
0
引用数:
0
h-index:
0
机构:
N CAROLINA STATE UNIV,RALEIGH,NC 27607
N CAROLINA STATE UNIV,RALEIGH,NC 27607
DUNBAR, PM
HAUSER, JR
论文数:
0
引用数:
0
h-index:
0
机构:
N CAROLINA STATE UNIV,RALEIGH,NC 27607
N CAROLINA STATE UNIV,RALEIGH,NC 27607
HAUSER, JR
[J].
SOLID-STATE ELECTRONICS,
1977,
20
(08)
: 697
-
701
[3]
FISTUL VI, 1969, HEAVILY DOPED SEMICO, P51
[4]
BANDGAP NARROWING IN MODERATELY TO HEAVILY DOPED SILICON
LANYON, HPD
论文数:
0
引用数:
0
h-index:
0
机构:
ITEK CORP,LEXINGTON,MA 02173
ITEK CORP,LEXINGTON,MA 02173
LANYON, HPD
TUFT, RA
论文数:
0
引用数:
0
h-index:
0
机构:
ITEK CORP,LEXINGTON,MA 02173
ITEK CORP,LEXINGTON,MA 02173
TUFT, RA
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(07)
: 1014
-
1018
[5]
INFLUENCE OF BANDGAP NARROWING ON PERFORMANCE OF SILICON N-P SOLAR-CELLS
LAUWERS, P
论文数:
0
引用数:
0
h-index:
0
LAUWERS, P
VANMEERBERGEN, J
论文数:
0
引用数:
0
h-index:
0
VANMEERBERGEN, J
BULTEEL, P
论文数:
0
引用数:
0
h-index:
0
BULTEEL, P
MERTENS, R
论文数:
0
引用数:
0
h-index:
0
MERTENS, R
VANOVERSTRAETEN, R
论文数:
0
引用数:
0
h-index:
0
VANOVERSTRAETEN, R
[J].
SOLID-STATE ELECTRONICS,
1978,
21
(05)
: 747
-
752
[6]
LI SS, 1968, PR INST ELECTR ELECT, V56, P1256
[7]
UNIFIED MODEL OF FUNDAMENTAL LIMITATIONS ON THE PERFORMANCE OF SILICON SOLAR-CELLS
REDFIELD, D
论文数:
0
引用数:
0
h-index:
0
REDFIELD, D
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1980,
27
(04)
: 766
-
771
[8]
MEASUREMENTS OF BANDGAP NARROWING IN SI BIPOLAR-TRANSISTORS
SLOTBOOM, JW
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
SLOTBOOM, JW
DEGRAAFF, HC
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
DEGRAAFF, HC
[J].
SOLID-STATE ELECTRONICS,
1976,
19
(10)
: 857
-
862
[9]
SHOCKLEY-LIKE EQUATIONS FOR THE CARRIER DENSITIES AND THE CURRENT FLOWS IN MATERIALS WITH A NONUNIFORM COMPOSITION
VANVLIET, KM
论文数:
0
引用数:
0
h-index:
0
机构:
LOUISIANA STATE UNIV,DEPT ELECT ENGN,BATON ROUGE,LA 70803
LOUISIANA STATE UNIV,DEPT ELECT ENGN,BATON ROUGE,LA 70803
VANVLIET, KM
MARSHAK, AH
论文数:
0
引用数:
0
h-index:
0
机构:
LOUISIANA STATE UNIV,DEPT ELECT ENGN,BATON ROUGE,LA 70803
LOUISIANA STATE UNIV,DEPT ELECT ENGN,BATON ROUGE,LA 70803
MARSHAK, AH
[J].
SOLID-STATE ELECTRONICS,
1980,
23
(01)
: 49
-
53
[10]
WEAVER HF, UNPUBLISHED
←
1
→