NOVEL PROCESS FOR DIRECT DELINEATION OF SPIN ON GLASS (SOG)

Some types of spin on glass (SOG) are radiationchemically sensitive and act as negative-tone resist for electron beam (EB) exposure. Using direct EB writing, 0.2 mu-m line and space (L/S) patterns are obtained with a 400 mu-C/cm2EB dose at an acceleration voltage of 30 keV. Although this material has high-resolution capability, the sensitivity is too low for practical resist applications. In order to improve sensitivity, an acid catalyzed system6) is introduced. 0.3 mu-m L/S patterns are delineated with an EB exposure dose of 0.7 mu-C/cm2 using a SOG-based chemically amplified material. This radiationchemically sensitive characteristic of SOG can be applied to a bi-layer resist system.