CHARACTERIZATION OF LOW-PRESSURE CHEMICALLY VAPOR-DEPOSITED TUNGSTEN NITRIDE FILMS

被引：35

作者：

MARCUS, SD

FOSTER, RF

机构：

[1] Materials Research Corporation, Phoenix, AZ 85040

来源：

THIN SOLID FILMS | 1993年 / 236卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(93)90691-H

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The low pressure chemical vapor deposition of W chi N thin films has been investigated utilizing the reaction of tungsten hexafluoride (WF6) and ammonia (NH3) at various temperatures (450-700 degrees C). Films were prepared using a single-wafer semiconductor production machine. The film resistivities, deposition rates, preferred crystal orientation, lattice constants, stoichiometry and surface morphology observed by scanning electron micrographs will be presented and compared with chemically vapor-deposited and reactively sputtered W chi N films. Application as a barrier and/or glue layer for advanced metallization for microelectronics will be discussed.

引用

页码：330 / 333

页数：4

共 12 条

[1]

AFFOLTER K, 1985, MATERIALS RES SOC P, V47, P47

[2]

Hillman J. T., 1992, Advanced Metallization for ULSI Applications (Formerly Workshop on Tungsten and Other Advanced Metals for ULSI Applications) Proceedings of the Conference, P311

[3]

HILLMAN JT, 1992, P IEEE VLSI MULTILEV, P295

[4] NEW METHOD TO IMPROVE THE ADHESION STRENGTH OF TUNGSTEN THIN-FILM ON SILICON BY W2N GLUE LAYER [J].