THEORETICAL-STUDY OF OXYGEN IN SILICON - BREAKING OF THE SI-SI BOND

被引：29

作者：

PLANS, J

DIAZ, G

MARTINEZ, E

YNDURAIN, F

机构：

来源：

PHYSICAL REVIEW B | 1987年 / 35卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.35.788

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：788 / 791

页数：4

共 17 条

[1] NON-EMPIRICAL PSEUDOPOTENTIALS FOR MOLECULAR CALCULATIONS .1. PSIBMOL ALGORITHM AND TEST CALCULATIONS [J].

BARTHELAT, JC ;

DURAND, P ;

SERAFINI, A .

MOLECULAR PHYSICS, 1977, 33 (01) :159-180

[2] ABSORPTION OF OXYGEN IN SILICON IN NEAR AND FAR INFRARED [J].

BOSOMWORTH, DR ;

HAYES, W ;

SPRAY, ARL ;

WATKINS, GD .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1970, 317 (1528) :133-+

[3] ELECTRON-STATES IN ALPHA-QUARTZ - SELF-CONSISTENT PSEUDOPOTENTIAL CALCULATION [J].

CHELIKOWSKY, JR ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1977, 15 (08) :4020-4029

[4] INTERPRETATION OF THE SPECTRA OBTAINED FROM OXYGEN-ADSORBED AND OXIDIZED SILICON SURFACES [J].

CIRACI, S ;

ELLIALTIOGLU, S ;

ERKOC, S .

PHYSICAL REVIEW B, 1982, 26 (10) :5716-5729

[5] CONFIGURATION + DIFFUSION OF ISOLATED OXYGEN IN SILICON + GERMANIUM [J].

CORBETT, JW ;

MCDONALD, RS ;

WATKINS, GD .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (08) :873-&

[6]

DAUDEY JP, UNPUB PSEUDOPOTENTIA

[7] 1ST-PRINCIPLES CALCULATION OF THE ELECTRONIC-STRUCTURE OF NONPERIODIC SOLIDS - APPLICATION TO A-SI-H [J].

DIAZ, G ;

MARTINEZ, E ;

YNDURAIN, F .

PHYSICAL REVIEW LETTERS, 1986, 56 (16) :1731-1734

[8] EXACT-EXCHANGE HARTREE-FOCK CALCULATIONS FOR PERIODIC-SYSTEMS .5. GROUND-STATE PROPERTIES OF SILICON [J].

DOVESI, R ;

CAUSA, M ;

ANGONOA, G .

PHYSICAL REVIEW B, 1981, 24 (08) :4177-4183

[9]

DUPUIS M, 1977, QCPE, V11, P338

[10] OXIDATION, IMPURITY DIFFUSION, AND DEFECT GROWTH IN SILICON - AN OVERVIEW [J].

FAIR, RB .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (06) :1360-1368

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