MEV IMPLANTATION MASKING USING AN ALUMINUM GALLIUM-ARSENIDE METAL LIFTOFF LAYER

被引：3

作者：

GHADIRI, MM ^{[1
]}

BRYAN, RP ^{[1
]}

MILLER, LM ^{[1
]}

TANG, T ^{[1
]}

GIVENS, ME ^{[1
]}

DETEMPLE, TA ^{[1
]}

COLEMAN, JJ ^{[1
]}

机构：

[1] UNIV ILLINOIS,CPD SEMICOND MICROELECTR LAB,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 02期

关键词：

D O I：

10.1063/1.343480

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：982 / 983

页数：2

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[4] METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

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[5]

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[6]

TOWNSEND PD, 1983, P SOC PHOTO-OPT INST, V401, P295, DOI 10.1117/12.935530

[7] PLANAR, ION-IMPLANTED BIPOLAR-DEVICES IN GAAS [J].

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