DYNAMIC STRAIN AGING IN CZOCHRALSKI-GROWN SILICON SINGLE-CRYSTALS

被引：13

作者：

GROSS, TS

MATHEWS, VK

DEANGELIS, RJ

OKAZAKI, K

机构：

来源：

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 1989年 / 117卷

关键词：

D O I：

10.1016/0921-5093(89)90088-9

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：75 / 82

页数：8

共 42 条

[11]

IMAI M, 1983, PHILOS MAG A, V47, P599, DOI 10.1080/01418618308245248

[12]

KIM YK, 1987, ACTA METALL, V35, P2001

[13] DISLOCATION VELOCITIES AND ELECTRONIC DOPING IN SILICON [J].

KULKARNI, SB ;

WILLIAMS, WS .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (10) :4318-4325

[14] TENSILE PROPERTIES OF CZOCHRALSKI GROWN SILICON FROM 900-1200-DEGREES-C [J].

MATHEWS, VK ;

GROSS, TS .

SCRIPTA METALLURGICA, 1986, 20 (12) :1677-1682

[15]

MATHEWS VK, 1987, SCRIPTA METALL, V21, P1713

[16]

MATHEWS VK, IN PRESS

[17] ON THE YIELD-POINT OF FLOATING-ZONE SILICON SINGLE-CRYSTALS .1. YIELD STRESSES AND ACTIVATION PARAMETERS [J].

OMRI, M ;

TETE, C ;

MICHEL, JP ;

GEORGE, A .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1987, 55 (05) :601-616

[18] ELECTRONIC EFFECTS ON DISLOCATION VELOCITIES IN HEAVILY DOPED SILICON [J].

PATEL, JR ;

TESTARDI, LR ;

FREELAND, PE .

PHYSICAL REVIEW B, 1976, 13 (08) :3548-3557

[19]

ROHATGI A, 1986, 26TH P PROJ INT M FL, P129

[20] DYNAMICAL RECOVERY AND SELF-DIFFUSION IN SILICON [J].

SIETHOFF, H ;

SCHROTER, W .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1978, 37 (06) :711-718

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