HREM INVESTIGATIONS OF THE NISI2/SI(111) INTERFACES BOUNDING A-TYPE NISI2 ISLANDS ON SI(111)

[1] STRUCTURE-ANALYSIS OF THE NISI2/(111)SI INTERFACE BY THE X-RAY STANDING WAVE METHOD [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (12): : L798 - L800

[2] BULLELIEUWMA CWT, 1989, HETEROSTRUCTURES SIL, P247

[3] ATOMIC-STRUCTURE OF THE NISI2/(111)SI INTERFACE [J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1982, 46 (05): : 849 - 862

[4] FOLL F, 1981, J APPL PHYS, V52, P250, DOI 10.1063/1.328440

[5] FOLL H, 1982, PHILOS MAG A, V45, P31, DOI 10.1080/01418618208243901

[6] GIBSON JM, 1982, APPL PHYS LETT, V41, P818, DOI 10.1063/1.93699

[7] THE GROWTH-BEHAVIOR OF EPITAXIAL NISI2 ISLANDS OF A-TYPE AND B-TYPE DURING THE REACTION OF NICKEL VAPOR WITH THE SI(111) SURFACE [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1989, 116 (01): : 67 - 80

[8] SCHOTTKY-BARRIER HEIGHTS OF EPITAXIAL NI-SILICIDES ON SI(111) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 855 - 859

[9] FORMATION OF ULTRATHIN SINGLE-CRYSTAL SILICIDE FILMS ON SI - SURFACE AND INTERFACIAL STABILIZATION OF SI-NISI2 EPITAXIAL STRUCTURES [J]. PHYSICAL REVIEW LETTERS, 1983, 50 (06) : 429 - 432

[10] EPITAXIAL SILICIDES [J]. THIN SOLID FILMS, 1982, 93 (1-2) : 77 - 90

[1] STRUCTURE-ANALYSIS OF THE NISI2/(111)SI INTERFACE BY THE X-RAY STANDING WAVE METHOD [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (12): : L798 - L800

[2] BULLELIEUWMA CWT, 1989, HETEROSTRUCTURES SIL, P247

[3] ATOMIC-STRUCTURE OF THE NISI2/(111)SI INTERFACE [J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1982, 46 (05): : 849 - 862

[4] FOLL F, 1981, J APPL PHYS, V52, P250, DOI 10.1063/1.328440

[5] FOLL H, 1982, PHILOS MAG A, V45, P31, DOI 10.1080/01418618208243901

[6] GIBSON JM, 1982, APPL PHYS LETT, V41, P818, DOI 10.1063/1.93699

[7] THE GROWTH-BEHAVIOR OF EPITAXIAL NISI2 ISLANDS OF A-TYPE AND B-TYPE DURING THE REACTION OF NICKEL VAPOR WITH THE SI(111) SURFACE [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1989, 116 (01): : 67 - 80

[8] SCHOTTKY-BARRIER HEIGHTS OF EPITAXIAL NI-SILICIDES ON SI(111) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 855 - 859

[9] FORMATION OF ULTRATHIN SINGLE-CRYSTAL SILICIDE FILMS ON SI - SURFACE AND INTERFACIAL STABILIZATION OF SI-NISI2 EPITAXIAL STRUCTURES [J]. PHYSICAL REVIEW LETTERS, 1983, 50 (06) : 429 - 432

[10] EPITAXIAL SILICIDES [J]. THIN SOLID FILMS, 1982, 93 (1-2) : 77 - 90