REDISTRIBUTION OF FE AND TI IMPLANTED INTO INP

被引：25

作者：

ULLRICH, H

KNECHT, A

BIMBERG, D

KRAUTLE, H

SCHLAAK, W

机构：

[1] FERNMELDE TECH ZENT AMT,FORSCHUNGSINST,DEUTSCH BUNDESPOST TELEKOM,W-6100 DARMSTADT,GERMANY

[2] HEINRICH HERTZ INST NACHRICHTENTECHN GMBH,W-1000 BERLIN 10,GERMANY

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 05期

关键词：

D O I：

10.1063/1.349370

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The redistribution of Fe and Ti implanted into InP and its recrystallization is studied using various thermal annealing techniques. Fe and Ti profiles are measured by secondary-ion mass spectroscopy and recrystallization by Rutherford backscattering channeling. Ti shows absolutely superior thermal stability under any circumstances as compared to Fe. Iron always accumulates at the surface and at a depth of approximately twice the projected range R(p). After high-dose implantation Fe additionally accumulates in the 0.8R(p) region. At similar doses Ti still shows no diffusion and only faint accumulation between the surface and R(p).

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页码：2604 / 2609

页数：6

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