INAS ISLAND-INDUCED-STRAIN DRIVEN ADATOM MIGRATION DURING GAAS OVERLAYER GROWTH

被引：191

作者：

XIE, QH ^{[1
]}

CHEN, P ^{[1
]}

MADHUKAR, A ^{[1
]}

机构：

[1] UNIV SO CALIF,DEPT PHYS,LOS ANGELES,CA 90089

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 16期

关键词：

D O I：

10.1063/1.112790

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The impact of the strain fields associated with partially strain relaxed InAs islands on GaAs (100) on the evolution of the growth front profile during subsequent GaAs capping layer growth as a function of the growth temperature is examined via placement of very thin AlGaAs marker layers. Transmission electron microscope studies reveal the presence of strain dominated atom migration away from the islands over dynamically evolving length scales of approximately 100-400 angstrom at higher growth temperature whereas at lower growth temperature such an effect is minimal. Anisotropy in the length scale of impact between the [011] and [011BAR] directions is observed. Estimates based upon a suitably adapted formulation of the classical theory of grain growth shows the mass transport to be dominantly strain rather than surface curvature driven. (C) 1994 American Institute of Physics.

引用

页码：2051 / 2053

页数：3

共 11 条

[1] MECHANISMS OF STRAINED ISLAND FORMATION IN MOLECULAR-BEAM EPITAXY OF INAS ON GAAS(100) [J].