EFFECT OF THIN TITANIUM INTERFACIAL LAYERS ON THE FORMATION OF PALLADIUM SILICIDE ON SILICON

[1] STRUCTURE AND ELECTRICAL CHARACTERISTICS OF EPITAXIAL PALLADIUM SILICIDE CONTACTS ON SINGLE-CRYSTAL SILICON AND DIFFUSED P-N DIODES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (12) : 1331 - &

[2] AN X-RAY STUDY OF DOMAIN-STRUCTURE AND STRESS IN PD2SI FILMS AT PD-SI INTERFACES [J]. THIN SOLID FILMS, 1982, 93 (1-2) : 161 - 169

[3] FURUKAWA S, 1983, JAPAN J APPL PH S221, V22, P21

[4] HOLLAND L, 1958, VACUUM DEPOSITION TH

[5] MCGINN JT, IN PRESS 1986 P FALL

[6] A LEED-AES STUDY OF THIN PD FILMS ON SI(111) AND (100) SUBSTRATES [J]. SURFACE SCIENCE, 1980, 97 (01) : 88 - 100

[7] FORMATION OF IRIDIUM SILICIDES FROM IR THIN-FILMS ON SI SUBSTRATES [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3357 - 3365

[8] THOMAS JH, 1987, J VAC SCI TECHNOL A, V5, P1617, DOI [10.1116/1.574576, 10.1116/1.583638]

[9] ION-BEAM CRYSTALLOGRAPHY OF METAL SILICON INTERFACES - PD-SI(111) [J]. THIN SOLID FILMS, 1982, 93 (1-2) : 151 - 159

[10] TU KN, 1981, J VAC SCI TECHNOL, V19, P775

[1] STRUCTURE AND ELECTRICAL CHARACTERISTICS OF EPITAXIAL PALLADIUM SILICIDE CONTACTS ON SINGLE-CRYSTAL SILICON AND DIFFUSED P-N DIODES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (12) : 1331 - &

[2] AN X-RAY STUDY OF DOMAIN-STRUCTURE AND STRESS IN PD2SI FILMS AT PD-SI INTERFACES [J]. THIN SOLID FILMS, 1982, 93 (1-2) : 161 - 169

[3] FURUKAWA S, 1983, JAPAN J APPL PH S221, V22, P21

[4] HOLLAND L, 1958, VACUUM DEPOSITION TH

[5] MCGINN JT, IN PRESS 1986 P FALL

[6] A LEED-AES STUDY OF THIN PD FILMS ON SI(111) AND (100) SUBSTRATES [J]. SURFACE SCIENCE, 1980, 97 (01) : 88 - 100

[7] FORMATION OF IRIDIUM SILICIDES FROM IR THIN-FILMS ON SI SUBSTRATES [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3357 - 3365

[8] THOMAS JH, 1987, J VAC SCI TECHNOL A, V5, P1617, DOI [10.1116/1.574576, 10.1116/1.583638]

[9] ION-BEAM CRYSTALLOGRAPHY OF METAL SILICON INTERFACES - PD-SI(111) [J]. THIN SOLID FILMS, 1982, 93 (1-2) : 151 - 159

[10] TU KN, 1981, J VAC SCI TECHNOL, V19, P775