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SCHOTTKY DIODES WITH HIGH SERIES RESISTANCE - LIMITATIONS OF FORWARD I-V METHODS
被引:150
作者
:
AUBRY, V
论文数:
0
引用数:
0
h-index:
0
机构:
Institut d'Electronique Fondamentale, URA CNRS 22, Université Paris Sud
AUBRY, V
MEYER, F
论文数:
0
引用数:
0
h-index:
0
机构:
Institut d'Electronique Fondamentale, URA CNRS 22, Université Paris Sud
MEYER, F
机构
:
[1]
Institut d'Electronique Fondamentale, URA CNRS 22, Université Paris Sud
来源
:
JOURNAL OF APPLIED PHYSICS
|
1994年
/ 76卷
/ 12期
关键词
:
D O I
:
10.1063/1.357909
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
Some methods have been proposed to deduce the value of Schottky parameters from forward I-V characteristic even in the presence of a large series resistance. In this paper, some well-known methods have been applied to experimental data of a real diode and to computer calculated curves. A comparison is made between these methods and the standard procedure. Some indications are given on the validity and the main limitations of all these techniques. © 1994 American Institute of Physics.
引用
收藏
页码:7973 / 7984
页数:12
相关论文
共 21 条
[1]
TEMPERATURE-DEPENDENCE OF THE SCHOTTKY-BARRIER HEIGHT OF TUNGSTEN ON N-TYPE AND P-TYPE SILICON
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IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598
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JOURNAL OF APPLIED PHYSICS,
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EXTRACTION OF SCHOTTKY DIODE PARAMETERS FROM FORWARD CURRENT-VOLTAGE CHARACTERISTICS
[J].
CHEUNG, SK
论文数:
0
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0
h-index:
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机构:
UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720
UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720
CHEUNG, SK
;
CHEUNG, NW
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0
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UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720
UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720
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APPLIED PHYSICS LETTERS,
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FORWARD IV PLOT FOR NONIDEAL SCHOTTKY DIODES WITH HIGH SERIES RESISTANCE
[J].
CIBILS, RM
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COHEN SS, 1986, METAL SEMICONDUCTEUR, V13
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REPORTS ON PROGRESS IN PHYSICS,
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A SELF-CONSISTENT APPROACH TO IV-MEASUREMENTS ON RECTIFYING METAL-SEMICONDUCTOR CONTACTS
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DONOVAL, D
;
PIRES, JD
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机构:
UPPSALA UNIV,DEPT TECHNOL,ELECTR GRP,S-75121 UPPSALA,SWEDEN
UPPSALA UNIV,DEPT TECHNOL,ELECTR GRP,S-75121 UPPSALA,SWEDEN
PIRES, JD
;
TOVE, PA
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0
引用数:
0
h-index:
0
机构:
UPPSALA UNIV,DEPT TECHNOL,ELECTR GRP,S-75121 UPPSALA,SWEDEN
UPPSALA UNIV,DEPT TECHNOL,ELECTR GRP,S-75121 UPPSALA,SWEDEN
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机构:
UPPSALA UNIV,DEPT TECHNOL,ELECTR GRP,S-75121 UPPSALA,SWEDEN
UPPSALA UNIV,DEPT TECHNOL,ELECTR GRP,S-75121 UPPSALA,SWEDEN
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SOLID-STATE ELECTRONICS,
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EXTRACTION OF SCHOTTKY DIODE (AND P-N-JUNCTION) PARAMETERS FROM IV CHARACTERISTICS
[J].
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ARISTOTELIAN UNIV SALONIKA,DEPT PHYS,SOLID STATE SECT,GR-54006 SALONIKA,GREECE
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;
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0
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0
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ARISTOTELIAN UNIV SALONIKA,DEPT PHYS,SOLID STATE SECT,GR-54006 SALONIKA,GREECE
ARISTOTELIAN UNIV SALONIKA,DEPT PHYS,SOLID STATE SECT,GR-54006 SALONIKA,GREECE
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;
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ARISTOTELIAN UNIV SALONIKA,DEPT PHYS,SOLID STATE SECT,GR-54006 SALONIKA,GREECE
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ELECTRICAL PROPERTIES OF NICKEL-LOW-DOPED N-TYPE GALLIUM-ARSENIDE SCHOTTKY-BARRIER DIODES
[J].
HACKAM, R
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0
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;
HARROP, P
论文数:
0
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0
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.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
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ED19
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:1231
-+
[10]
A SYSTEMATIC-APPROACH TO THE MEASUREMENT OF IDEALITY FACTOR, SERIES RESISTANCE, AND BARRIER HEIGHT FOR SCHOTTKY DIODES
[J].
LEE, TC
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physics, University of Hong Kong, Hong Kong
LEE, TC
;
FUNG, S
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physics, University of Hong Kong, Hong Kong
FUNG, S
;
BELING, CD
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引用数:
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Department of Physics, University of Hong Kong, Hong Kong
BELING, CD
;
AU, HL
论文数:
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引用数:
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h-index:
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机构:
Department of Physics, University of Hong Kong, Hong Kong
AU, HL
.
JOURNAL OF APPLIED PHYSICS,
1992,
72
(10)
:4739
-4742
←
1
2
3
→
共 21 条
[1]
TEMPERATURE-DEPENDENCE OF THE SCHOTTKY-BARRIER HEIGHT OF TUNGSTEN ON N-TYPE AND P-TYPE SILICON
[J].
ABOELFOTOH, MO
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598
ABOELFOTOH, MO
.
SOLID-STATE ELECTRONICS,
1991,
34
(01)
:51
-55
[2]
GENERALIZED NORDE PLOT INCLUDING DETERMINATION OF THE IDEALITY FACTOR
[J].
BOHLIN, KE
论文数:
0
引用数:
0
h-index:
0
BOHLIN, KE
.
JOURNAL OF APPLIED PHYSICS,
1986,
60
(03)
:1223
-1224
[3]
EXTRACTION OF SCHOTTKY DIODE PARAMETERS FROM FORWARD CURRENT-VOLTAGE CHARACTERISTICS
[J].
CHEUNG, SK
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720
UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720
CHEUNG, SK
;
CHEUNG, NW
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720
UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720
CHEUNG, NW
.
APPLIED PHYSICS LETTERS,
1986,
49
(02)
:85
-87
[4]
FORWARD IV PLOT FOR NONIDEAL SCHOTTKY DIODES WITH HIGH SERIES RESISTANCE
[J].
CIBILS, RM
论文数:
0
引用数:
0
h-index:
0
CIBILS, RM
;
BUITRAGO, RH
论文数:
0
引用数:
0
h-index:
0
BUITRAGO, RH
.
JOURNAL OF APPLIED PHYSICS,
1985,
58
(02)
:1075
-1077
[5]
COHEN SS, 1986, METAL SEMICONDUCTEUR, V13
[6]
SILICON FILMS ON SAPPHIRE
[J].
CRISTOLOVEANU, S
论文数:
0
引用数:
0
h-index:
0
CRISTOLOVEANU, S
.
REPORTS ON PROGRESS IN PHYSICS,
1987,
50
(03)
:327
-371
[7]
A SELF-CONSISTENT APPROACH TO IV-MEASUREMENTS ON RECTIFYING METAL-SEMICONDUCTOR CONTACTS
[J].
论文数:
引用数:
h-index:
机构:
DONOVAL, D
;
PIRES, JD
论文数:
0
引用数:
0
h-index:
0
机构:
UPPSALA UNIV,DEPT TECHNOL,ELECTR GRP,S-75121 UPPSALA,SWEDEN
UPPSALA UNIV,DEPT TECHNOL,ELECTR GRP,S-75121 UPPSALA,SWEDEN
PIRES, JD
;
TOVE, PA
论文数:
0
引用数:
0
h-index:
0
机构:
UPPSALA UNIV,DEPT TECHNOL,ELECTR GRP,S-75121 UPPSALA,SWEDEN
UPPSALA UNIV,DEPT TECHNOL,ELECTR GRP,S-75121 UPPSALA,SWEDEN
TOVE, PA
;
HARMAN, R
论文数:
0
引用数:
0
h-index:
0
机构:
UPPSALA UNIV,DEPT TECHNOL,ELECTR GRP,S-75121 UPPSALA,SWEDEN
UPPSALA UNIV,DEPT TECHNOL,ELECTR GRP,S-75121 UPPSALA,SWEDEN
HARMAN, R
.
SOLID-STATE ELECTRONICS,
1989,
32
(11)
:961
-964
[8]
EXTRACTION OF SCHOTTKY DIODE (AND P-N-JUNCTION) PARAMETERS FROM IV CHARACTERISTICS
[J].
EVANGELOU, EK
论文数:
0
引用数:
0
h-index:
0
机构:
ARISTOTELIAN UNIV SALONIKA,DEPT PHYS,SOLID STATE SECT,GR-54006 SALONIKA,GREECE
ARISTOTELIAN UNIV SALONIKA,DEPT PHYS,SOLID STATE SECT,GR-54006 SALONIKA,GREECE
EVANGELOU, EK
;
PAPADIMITRIOU, L
论文数:
0
引用数:
0
h-index:
0
机构:
ARISTOTELIAN UNIV SALONIKA,DEPT PHYS,SOLID STATE SECT,GR-54006 SALONIKA,GREECE
ARISTOTELIAN UNIV SALONIKA,DEPT PHYS,SOLID STATE SECT,GR-54006 SALONIKA,GREECE
PAPADIMITRIOU, L
;
DIMITRIADES, CA
论文数:
0
引用数:
0
h-index:
0
机构:
ARISTOTELIAN UNIV SALONIKA,DEPT PHYS,SOLID STATE SECT,GR-54006 SALONIKA,GREECE
ARISTOTELIAN UNIV SALONIKA,DEPT PHYS,SOLID STATE SECT,GR-54006 SALONIKA,GREECE
DIMITRIADES, CA
;
GIAKOUMAKIS, GE
论文数:
0
引用数:
0
h-index:
0
机构:
ARISTOTELIAN UNIV SALONIKA,DEPT PHYS,SOLID STATE SECT,GR-54006 SALONIKA,GREECE
ARISTOTELIAN UNIV SALONIKA,DEPT PHYS,SOLID STATE SECT,GR-54006 SALONIKA,GREECE
GIAKOUMAKIS, GE
.
SOLID-STATE ELECTRONICS,
1993,
36
(11)
:1633
-1635
[9]
ELECTRICAL PROPERTIES OF NICKEL-LOW-DOPED N-TYPE GALLIUM-ARSENIDE SCHOTTKY-BARRIER DIODES
[J].
HACKAM, R
论文数:
0
引用数:
0
h-index:
0
HACKAM, R
;
HARROP, P
论文数:
0
引用数:
0
h-index:
0
HARROP, P
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1972,
ED19
(12)
:1231
-+
[10]
A SYSTEMATIC-APPROACH TO THE MEASUREMENT OF IDEALITY FACTOR, SERIES RESISTANCE, AND BARRIER HEIGHT FOR SCHOTTKY DIODES
[J].
LEE, TC
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physics, University of Hong Kong, Hong Kong
LEE, TC
;
FUNG, S
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physics, University of Hong Kong, Hong Kong
FUNG, S
;
BELING, CD
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physics, University of Hong Kong, Hong Kong
BELING, CD
;
AU, HL
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physics, University of Hong Kong, Hong Kong
AU, HL
.
JOURNAL OF APPLIED PHYSICS,
1992,
72
(10)
:4739
-4742
←
1
2
3
→